| 摘要 |
PURPOSE: A light emitting device is provided to consecutively change a refractive index in a direction toward the outside of an active layer, thereby improving light extraction efficiency. CONSTITUTION: A light emitting structure comprises an active layer(150) between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer(140). A light extraction structure includes an uneven structure on a single region of the first conductivity type semiconductor layer. The light extraction structure includes a photonic crystal structure and has refractive index smaller than the refractive index of the first conductivity type semiconductor layer. The photonic crystal structure is formed on the uneven structure of the light extraction structure. |
