| 摘要 |
A structure of trench capacitor and method for manufacturing the trench capacitor is provided. The collar oxide layer of the trench capacitor is formed by a thermal oxidation process. Moreover, a protective layer such as silicon nitride covers the collar oxide layer. A failure analysis of the collar oxide layer can be operated by detecting the protective layer. If the protective layer is detected, the collar oxide layer is therefore at a suitable thickness. Furthermore, a mask layer rather than the collar oxide layer is used as a mask during the trench formation. |
