发明名称 Light emitting device and method of manufacturing the same
摘要 The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.
申请公布号 US8164107(B2) 申请公布日期 2012.04.24
申请号 US20090628950 申请日期 2009.12.01
申请人 CHO HYUN KYONG;KIM SUN KYUNG;PARK GYEONG GEUN;LG INNOTEK CO., LTD. 发明人 CHO HYUN KYONG;KIM SUN KYUNG;PARK GYEONG GEUN
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
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