发明名称 |
Light emitting device and method of manufacturing the same |
摘要 |
The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer. |
申请公布号 |
US8164107(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20090628950 |
申请日期 |
2009.12.01 |
申请人 |
CHO HYUN KYONG;KIM SUN KYUNG;PARK GYEONG GEUN;LG INNOTEK CO., LTD. |
发明人 |
CHO HYUN KYONG;KIM SUN KYUNG;PARK GYEONG GEUN |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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