| 摘要 |
A light emitting diode which includes a laminate including an n-type cladding layer, an emission layer which has a quantum well structure having a well layer and a barrier layer, an intermediate layer and a p-type cladding layer in this order, wherein the composition of each of the layers is represented by the composition formula: (AlXGa1-X)YIn1-YP (0≦̸X≦̸1, 0<Y≦̸1), and the composition of the barrier layer is represented by the composition formula: (AlXGa1-X)YIn1-YP (0.5≦̸X≦̸1, 0<Y≦̸1). |
