发明名称 Fabrication of finned memory arrays
摘要 Methods and apparatus are provided. For an embodiment, a plurality fins is formed in a substrate so that the fins protrude from a substrate. After the plurality fins is formed, the fins are isotropically etched to reduce a width of the fins and to round an upper surface of the fins. A first dielectric layer is formed overlying the isotropically etched fins. A first conductive layer is formed overlying the first dielectric layer. A second dielectric layer is formed overlying the first conductive layer. A second conductive layer is formed overlying the second dielectric layer.
申请公布号 US8163610(B2) 申请公布日期 2012.04.24
申请号 US201113117364 申请日期 2011.05.27
申请人 ARITOME SEIICHI;MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 H01L21/8238;H01L29/76 主分类号 H01L21/8238
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