发明名称 |
Reduction of punch-through disturb during programming of a memory device |
摘要 |
A punch-through disturb effect in a memory device can be reduced by biasing a selected word line at a program voltage to program a selected memory cell, biasing word lines on the drain side of the series string with a Vpass voltage, turning off an adjacent memory cell to the selected memory cell, and biasing remaining word lines on the source side of the turned-off memory cell with a Vlow voltage that is less than Vpass. |
申请公布号 |
US8164950(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20100778524 |
申请日期 |
2010.05.12 |
申请人 |
TORSI ALESSANDRO;MUSILLI CARLO;ARITOME SEIICHI;MICRON TECHNOLOGY, INC. |
发明人 |
TORSI ALESSANDRO;MUSILLI CARLO;ARITOME SEIICHI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|