发明名称 Magnetic shift register memory
摘要 A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.
申请公布号 US8164939(B2) 申请公布日期 2012.04.24
申请号 US20100710373 申请日期 2010.02.23
申请人 HUNG CHIEN-CHUNG;SHEN KUEI-HUNG;TSAI CHING-HSIANG;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 HUNG CHIEN-CHUNG;SHEN KUEI-HUNG;TSAI CHING-HSIANG
分类号 G11C19/00 主分类号 G11C19/00
代理机构 代理人
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