SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to implement a multi bit by storing data of various bits according to a channel resistor of a flash memory device. CONSTITUTION: A first memory device includes a source, a drain, and a first storage unit(110) formed on a semiconductor substrate. A second memory device includes a second storage unit(170) connected to a drain of the first memory device. A bit line is connected to the second memory device. A tunnel insulation layer is formed on the upper side of the semiconductor substrate between the source and the drain. The first storage unit is formed on the upper side of the tunnel insulation layer. A blocking layer is formed on the upper side of the first storage unit. A control gate(120) is formed on the upper side of the blocking layer.