| 摘要 |
Multi-purpose poly edge test structure. According to an embodiment, the present invention provides a test structure. The test structure includes a doped silicon substrate, the doped silicon substrate being grounded, the doped silicon substrate including a first gate structure and a second gate structure, the first and second gate structures overlaying the doped silicon substrate. The test structure also includes a first conducting pad being electrically coupled to the first gate structure. The test structure also includes a second conducting pad being electrically coupled to the second gate structure. |
