发明名称 |
Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone |
摘要 |
An asymmetric insulated-gate field effect transistor (100U or 102U) is provided along an upper surface of a semiconductor body so as to have first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or 302) overlies a gate dielectric layer (260 or 300) above the channel zone. A pocket portion (250 or 290) of the body material more heavily doped than laterally adjacent material of the body material extends along largely only the first of the S/D zones and into the channel zone. The vertical dopant profile of the pocket portion is tailored to reach a plurality of local maxima at respective locations (PH-1-PH-3-NH-3) spaced apart from one another. This typically enables the transistor to have reduced current leakage. |
申请公布号 |
US8163619(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20090382967 |
申请日期 |
2009.03.27 |
申请人 |
YANG JENG-JIUN;BULUCEA CONSTANTIN;BAHL SANDEEP R.;NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YANG JENG-JIUN;BULUCEA CONSTANTIN;BAHL SANDEEP R. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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