发明名称 |
Semiconductor light emitting device |
摘要 |
A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.
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申请公布号 |
US8164102(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20060392764 |
申请日期 |
2006.03.30 |
申请人 |
FURUKAWA CHISATO;NAKAMURA TAKAFUMI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FURUKAWA CHISATO;NAKAMURA TAKAFUMI |
分类号 |
H01L29/18;H01L33/32;H01L33/54;H01L33/56 |
主分类号 |
H01L29/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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