发明名称 Memory circuits, systems, and method of interleaving accesses thereof
摘要 An interleaved memory circuit includes a first memory bank having a first memory cell. A first local control circuit is coupled with the first memory bank. A second memory bank includes a second memory cell. A second local control circuit is coupled with the second memory bank. An IO block is coupled with the first memory bank and the second memory bank. A global control circuit is coupled with the first and second local control circuits. An interleaving access includes a clock signal having a first cycle and a second cycle for accessing the first memory cell and the second memory cell, respectively, wherein the second cycle is capable of enabling the first local control circuit to trigger a first transition of a first read column select signal RSSL for accessing the first memory cell.
申请公布号 US8164974(B2) 申请公布日期 2012.04.24
申请号 US20100698423 申请日期 2010.02.02
申请人 HSU KUOYUAN;HUANG MING-CHIEH;KIM YOUNG SUK;KENGERI SUBRAMANI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSU KUOYUAN;HUANG MING-CHIEH;KIM YOUNG SUK;KENGERI SUBRAMANI
分类号 G11C11/00 主分类号 G11C11/00
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