AN INTEGRATED DIRECT-BAND SEMICONDUCTOR NANOWIRE ON MECHANICAL STRUCTURES TO FACILITATE MEASUREMENT OF STRUCTURES DISPLACEMENT

摘要

PURPOSE: An ultra fine kinetic displacement measuring method of a micro/nano dynamic structure in which a semiconductor nanowire is joined is provided to obtain the same resolving power and sensibility all the times through a simple process without a complex optical alignment because a photon is emitted to the specific segment of the dynamic device where an endmost part of the semiconductor nanowire. CONSTITUTION: An ultra fine kinetic displacement measuring method of a micro/nano dynamic structure in which a semiconductor nanowire is joined comprises next steps. A Cds power is heated in high temperatures by using a Chemical Vapor Deposition method so that a nanowire is connected to a nano Au catalysis formed on the Si substrate. The nanowire perpendicularly formed on the Si substrate is dipped into the ethanol as a whole substrate, thereby being divided into a substrate and nanowiere by using ultra waves. The ethanol-nanowire solution is dispersed into the dynamic structure to form by using a micro picket after eliminating the substrate from the ethanol solution and dried by using a nitrogen gas after dispersing so that the dynamic structure and the nanowire are joined by using the vander. The valence band electron field is metastasized to the semiconductor nanowire and the photon is emitted in the electron-hole recombination.