HALL CROSS STRUCTURE FOR CONTROL THE ANOMALOUS HALL EFFECT THROUGH COMPRESSIVE STRAIN

摘要

PURPOSE: A hole cross structure for controlling an anomalous hole effect by using the change of a compressive strain is provided to easily develop a nonvolatile memory with high integration and low power consumption by controlling the anomalous hole effect according to the change of the compressive strain of a hole cross. CONSTITUTION: A sacrificial layer(1) is formed by an etching process. A hole cross(2) passes through the upper side of the sacrificial layer. The hole cross is formed by mutually intersecting beams(3). A piezo material is deposited on the upper side of the beam.