SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a crystal structure from being damaged due to an ion implantation process by removing the ion implantation process. CONSTITUTION: A substrate(110) includes a first surface(111a) and a second surface(111b,111c) which is recessed on both sides of the first surface. A gate pattern(120) includes a gate electrode(122) and a gate insulation layer(121) formed on the first surface. A gate spacer(124) is formed on a sidewall of the gate pattern and protects the side of a gate electrode. A silicon buffer layer(131) is formed on the second surface. A source region(132) and a drain region(133) are located on the silicon buffer layer.