发明名称 |
PROCESS FOR PRODUCTION OF SILICON CARBIDE SUBSTRATE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate.</p> |
申请公布号 |
KR20120038461(A) |
申请公布日期 |
2012.04.23 |
申请号 |
KR20127002622 |
申请日期 |
2011.02.25 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIGUCHI TARO;HARADA SHIN;INOUE HIROKI;SASAKI MAKOTO |
分类号 |
H01L21/20;H01L21/336;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|