METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE USING NANO PARTICLE

摘要

PURPOSE: A method for manufacturing a nitride based semiconductor device using a nano particle is provided to form a nitride based semiconductor layer having good quality in which strain and dislocation density are reduced by forming a nitride based semiconductor layer on a nano-particle layer after nano particle layers are formed into multiple on the different kinds of substrates. CONSTITUTION: Different kinds of substrates are prepared(S61). A dielectric layer is formed on the different kinds of the substrates(S63). A nano-particle layer of multilayer is formed on the dielectric layer(S65). A nitride based semiconductor layer is formed on the nano-particle layer(S67). A support substrate is welded on the nitride based semiconductor layer(S71). The different kinds of the substrates, on which the dielectric layer is formed, are separated(S73). The nitride based semiconductor device is obtained by eliminating the nano-particle layer(S75).