| 摘要 |
PURPOSE: A light emitting device is provided to improve light extraction efficiency by reducing damage in a growth process of a conductive semiconductor layer. CONSTITUTION: A light emitting structure(150) is formed on a nitride semiconductor layer(140) and includes a first conductive semiconductor layer(152), an active layer(154), and a second conductive semiconductor layer(156). An ohmic layer(162) is formed on the light emitting structure. A reflection layer(164) is formed on the ohmic layer. A conductive support substrate(168) is formed on the reflection layer.
|
