发明名称 |
METHOD FOR MANUFACTURING SINGLE CRYSTAL INGOT |
摘要 |
PURPOSE: A method for manufacturing a single crystalline ingot is provided to reduce a structure loss by minimizing a thermal shock in a dipping process and a soldering process. CONSTITUTION: A seed crystal is dipped in melt. The seed crystal is soldered after a dipping process. A body process is performed after a soldering process. The lowest resistivity is 12 mΩ or more in the back part of the body process of the single crystal. A tailing process is performed after the soldering process.
|
申请公布号 |
KR20120037575(A) |
申请公布日期 |
2012.04.20 |
申请号 |
KR20100099110 |
申请日期 |
2010.10.12 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
PARK, IL JIN;CHOI, YUN HWAN |
分类号 |
C30B15/20;C30B29/06;H01L21/02 |
主分类号 |
C30B15/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|