发明名称 METHOD FOR MANUFACTURING SINGLE CRYSTAL INGOT
摘要 PURPOSE: A method for manufacturing a single crystalline ingot is provided to reduce a structure loss by minimizing a thermal shock in a dipping process and a soldering process. CONSTITUTION: A seed crystal is dipped in melt. The seed crystal is soldered after a dipping process. A body process is performed after a soldering process. The lowest resistivity is 12 mΩ or more in the back part of the body process of the single crystal. A tailing process is performed after the soldering process.
申请公布号 KR20120037575(A) 申请公布日期 2012.04.20
申请号 KR20100099110 申请日期 2010.10.12
申请人 LG SILTRON INCORPORATED 发明人 PARK, IL JIN;CHOI, YUN HWAN
分类号 C30B15/20;C30B29/06;H01L21/02 主分类号 C30B15/20
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