METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of the semiconductor device by preventing a gate insulation layer pattern from being damaged. CONSTITUTION: A sacrificial gate electrode is formed on a substrate(1). A gate spacer(11) is formed on the substrate near the sacrificial gate electrode. A first recess is formed by simultaneously removing a part of the sacrificial gate electrode and a part of the gate spacer. A second recess is formed by removing the sacrificial gate electrode. A metal gate electrode(43) is formed by depositing metal to fill the first recess and the second recess.