发明名称 MIRROR FOR THE EUV WAVELENGTH RANGE, PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY COMPRISING SUCH A MIRROR, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION OBJECTIVE
摘要 EUV-mirror having a substrate (S) and a layer arrangement that includes plural layer subsystems (P″, P′″) each consisting of a periodic sequence of at least two periods (P2, P3) of individual layers. The periods (P2, P3) include two individual layers composed of different materials for a high refractive index layer (H″, H′″) and a low refractive index layer (L″, L′″) and have within each layer subsystem (P″, P′″) a constant thickness (d2, d3) that deviates from that of the periods of an adjacent layer subsystem. In one alternative, the layer subsystem (P″) second most distant from the substrate has a period sequence (P2) such that the first high refractive index layer (H′″) of the layer subsystem (P′″) most distant from the substrate directly succeeds the last high refractive index layer (H″) of the layer subsystem (P″) second most distant from the substrate
申请公布号 KR20120037933(A) 申请公布日期 2012.04.20
申请号 KR20127000645 申请日期 2010.06.01
申请人 CARL ZEISS SMT GMBH 发明人 PAUL HANS JOCHEN;BRAUN GERHARD;MIGURA SASCHA;DODOC AURELIAN;ZACZEK CHRISTOPH
分类号 G03F7/20;G02B5/08 主分类号 G03F7/20
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