PHOTOVOLTAIC DEVICE OF BASED ON NITRIDE SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A solar cell based on a nitride semiconductor and a fabricating method thereof are provided to improve photoelectric conversion efficiency by increasing an entire area of a photoactive layer lighting which receives incident light. CONSTITUTION: A first n-type nitride semiconductor layer(120) is formed on a substrate(100). A second n-type nitride semiconductor layer(140) is formed on the first n-type nitride semiconductor layer. A photoactive layer(150) is formed on the second n-type nitride semiconductor layer. A p-type nitride semiconductor layer(160) is formed on the photoactive layer. A transparent electrode(170) is formed on the p-type nitride semiconductor layer.