| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high resistance silicone wafer maintaining on high resistance even after being subjected to heat treatment in a device manufacturing step and having high mechanical strength and high gettering ability of a wafer. <P>SOLUTION: In manufacturing the silicon wafer having a set resistance ratio by growing a silicon ingot by adding a dopant according to the resistance ratio by a Czochralski method and by slicing the silicon ingot, the correlation between the resistance ratio after the heat treatment of the silicon wafer after the heat treatment in the device manufacturing step providing the silicon wafer and the oxygen concentration of the silicon ingot from which the silicon wafer is cut out is obtained in advance in each of set resistance ratios, and the growth of the silicon ingot is carried out under the oxygen concentration where conductive type is reversed in the correlation to the set resistance ratio of the ingot. <P>COPYRIGHT: (C)2012,JPO&INPIT |
