| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cleaning method for an SiC epitaxial growth device. <P>SOLUTION: A cleaning method comprises: a film forming step of forming an SiC epitaxial film on a processed substrate placed in a reaction chamber; a modification step of supplying a first gas (for example, a chlorine gas) to modify the SiC film deposited on a member provided in the reaction chamber in the film forming step; and a removal step of supplying a second gas (for example, a fluorine-based gas, an oxidation gas, or a hydrogen gas) to remove a deposition film modified in the modification step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
