EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer in which autodoping to a device active layer or misfit dislocation is less susceptible to occur, and pollution of the device active layer due to impurity metal is reduced effectively even if the wafer is made thin or thick after device formation, and to provide a manufacturing method therefor.

SOLUTION: The epitaxial wafer includes a barrier layer formed by diffusing group V atoms toward the inside from the surface of a silicon substrate and located on the surface layer of the silicon substrate while containing group V atoms with a concentration of 2×1013-1×1018atoms/cm3, and a device active layer consisting of a silicon epitaxial film formed on the barrier layer. The manufacturing method of an epitaxial wafer includes a barrier layer formation step, and a device active layer formation step.

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