Provided is an inertial sensor device comprising a detection part having an MEMS structure, wherein convenience during sensor installation is ensured while erroneous operation caused by the application of external vibration is controlled. To achieve this objective, an anti-vibration structure (103) is provided in the inertial sensor device, between a semiconductor chip (102) mounted on a package substrate and a semiconductor chip (104) comprising a sensor detection part. The anti-vibration structure (103) has a structure in which the periphery of an anti-vibration part (103a) is surrounded by an anti-vibration part (103b) comprising a material having a larger Young's modulus.