| 摘要 |
<p>The purpose of the present invention is to provide: a radiation-sensitive resin composition which, when used in a resist pattern formation method in which a developing liquid comprising an organic solvent is used, gives a resist film that can be inhibited from suffering a film loss through pattern formation and form a resist pattern which is excellent in terms of CDU and MEEF and that sufficiently satisfies resolution; and a method for forming a resist pattern using the resin composition. The resist pattern formation method comprises (1) a resist film formation step in which a radiation-sensitive resin composition is applied to a substrate, (2) an exposure step, and (3) a development step in which a developing liquid comprising 80 mass% or more organic solvent is used, and is characterized in that the radiation-sensitive resin composition comprises [A] a polymer which has a weight-average molecular weight exceeding 6,000 in terms of polystyrene, has a structural unit containing an acid-dissociable group, and has a content of hydroxy-containing structural units of less than 5 mol% and [B] a radiation-sensitive acid generator.</p> |
