| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an EEPROM capable of preventing erroneous writing caused by residual charge in a booster circuit. <P>SOLUTION: In an EEPROM of the embodiment, a booster circuit 2 generates a high voltage VPP higher than a power supply voltage VDD with a charge pump system, as a writing voltage supplied to nonvolatile memory cells arranged in a memory cell array 1. A discharge circuit 3 has an MOS transistor MT1 which is connected between an output terminal of the booster circuit 2 and a power line of a ground potential GND. When any one of a read enable signal RE, a standby signal ST, and a write protect signal WR_PRTCT is input, a discharge control circuit 4 outputs a discharge indication signal DSC to bring the MOS transistor MT1 of the discharge circuit 3 into conduction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
