| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor diode which is low in on-resistance, on-voltage, and reverse leakage current, in a nitride semiconductor device. <P>SOLUTION: A nitride semiconductor diode comprising a cathode electrode 3 and anode electrodes 4 and 5 formed on a nitride semiconductors 1 and 2 has a recess structure 6 dug into the nitride semiconductor, in the peripheral part of the anode electrodes 4 and 5. The anode electrode 5 is embedded in the recess structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
