发明名称 |
METHODS OF FORMING GATE DIELECTRIC MATERIAL |
摘要 |
A method of forming gate dielectric material includes forming a silicon oxide gate layer over a substrate. The silicon oxide gate layer is treated with a first ozone-containing gas. After treating the silicon oxide gate layer, a high dielectric constant (high-k) gate dielectric layer is formed over the treated silicon oxide gate layer.
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申请公布号 |
US2012094504(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113004309 |
申请日期 |
2011.01.11 |
申请人 |
YAO LIANG-GI;CHEN CHIA-CHENG;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YAO LIANG-GI;CHEN CHIA-CHENG;WANN CLEMENT HSINGJEN |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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