HIGH BANDGAP III-V ALLOYS FOR HIGH EFFICIENCY OPTOELECTRONICS
摘要
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached.
申请公布号
WO2012051324(A1)
申请公布日期
2012.04.19
申请号
WO2011US55994
申请日期
2011.10.12
申请人
ALLIANCE FOR SUSTAINABLE ENERGY, LLC;ALBERI, KIRSTIN;MASCARENHAS, ANGELO;WANLASS, MARK W.
发明人
ALBERI, KIRSTIN;MASCARENHAS, ANGELO;WANLASS, MARK W.