| 摘要 |
The invention relates to a device comprising at least one transistor produced on a substrate (1) made of a first semiconductor, each transistor (20, 20) comprising: a gate electrode (5), called the gate; two conductive electrodes (3, 4); a well (2), made of a second semiconductor, embedded in the substrate (1) and defining a region able to form a channel, called the channel region; and an insulating region (6) separating the gate (5) from the two electrodes (3, 4) and from the channel region, characterized in that the channel region lies inside the well (2) and makes direct electrical contact with at least one of the two conductive electrodes (3, 4). |
