Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included.
申请公布号
WO2011130397(A3)
申请公布日期
2012.04.19
申请号
WO2011US32303
申请日期
2011.04.13
申请人
NOVELLUS SYSTEMS, INC.;HAUSMANN, DENNIS, M.;HENRI, JON;SRIRAM, MANDYAM;VAN SCHRAVENDIJK, BART, J.
发明人
HAUSMANN, DENNIS, M.;HENRI, JON;SRIRAM, MANDYAM;VAN SCHRAVENDIJK, BART, J.