SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD WITH IMPROVED EPITAXIAL QUALITY OF III-V COMPOUND ON SILICON SURFACES

摘要

Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape of atoms from the region and enables the reduction or elimination of stacking faults along with the annealing.