| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device obtained by applying a gettering method that is suitable for silicon on insulator (SOI). <P>SOLUTION: A semiconductor device having an SOI structure including an embedded oxide film and a surface silicon layer on the embedded oxide film comprises a transistor including the surface silicon layer as an active layer on the embedded oxide film, and an element isolation insulating film. A capacitor is formed on the element isolation insulating film and a rare gas element or a metal element is included in the element isolation insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
