| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a termination trench capable of injecting an insulator film without a void. <P>SOLUTION: The semiconductor device according to an embodiment of the present invention comprises: an element forming region having a cell region, in which a semiconductor element is formed, and a termination trench region, in which four corners of the cell region are surrounded by two trenches whose longitudinal directions are parallel to an X-direction and two trenches whose longitudinal direction are parallel to a Y-direction that is 90 degrees to the X-direction; and a dicing line region having a groove for separating plural element forming regions. In the termination trench region, at four corners of the element forming region, the trenches whose longitudinal directions are parallel to the X-direction and the trenches whose longitudinal directions are parallel to the Y-direction are crossed with each other. On four side faces of the element forming region, while a vertical cross section in a short direction of the termination trench region is opened, the termination trench region is in vertical contact with the longitudinal direction of the dicing line region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
