发明名称 |
METHOD FOR SELECTIVE OXIDATION, DEVICE FOR SELECTIVE OXIDATION, AND COMPUTER-READABLE MEMORY MEDIUM |
摘要 |
A selective oxidation treatment method in which plasma of a hydrogen gas and an oxygen containing gas is allowed to act on an object to be treated, and in which silicon and a metallic material are exposed in the surface, within a treatment container of a plasma treatment apparatus comprises: after the supply of the hydrogen gas from a hydrogen gas supply source is initiated by using a first inert gas, which passes through a first supply path, as a carrier gas, initiating the supply of the oxygen containing gas from an oxygen containing gas supply source by using a second inert gas, which passes through a second supply path, as a carrier gas before the plasma is ignited; igniting the plasma of a treatment gas including the oxygen containing gas and the hydrogen gas within the treatment container; and selectively oxidizing the silicon by the plasma. |
申请公布号 |
US2012094505(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201013376678 |
申请日期 |
2010.07.26 |
申请人 |
NAKAMURA HIDEO;KABE YOSHIRO;ISA KAZUHIRO;KITAGAWA JUNICHI;TOKYO ELECTRON LIMITED |
发明人 |
NAKAMURA HIDEO;KABE YOSHIRO;ISA KAZUHIRO;KITAGAWA JUNICHI |
分类号 |
H01L21/316;B05C11/00;C23C16/50 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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