发明名称 |
CMOS IMAGE SENSOR AND FABRICATING METHOD THEREOF |
摘要 |
A method includes: forming a transfer gate on a semiconductor substrate; forming a first ion implantation region on a first side of the transfer gate; forming a second ion implantation region on the first side of the transfer gate such that the second ion implantation region encloses the first ion implantation region; forming a third ion implantation region along a surface of the semiconductor substrate; and forming a floating diffusion region at a second side of the transfer gate. |
申请公布号 |
US2012094419(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113240400 |
申请日期 |
2011.09.22 |
申请人 |
LIM YOUN-SUB;INTELLECTUAL VENTURES II LLC |
发明人 |
LIM YOUN-SUB |
分类号 |
H01L27/146;H01L31/18;H01L21/425;H01L21/8238;H01L31/10;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|