| 发明名称 |
SINGLE-ENDED SENSING SCHEME FOR MEMORY |
| 摘要 |
A memory having a single-ended sensing scheme includes a bit line, a memory cell coupled to the bit line, and a precharge circuit. The precharge circuit is configured to precharge the bit line to a precharge voltage between a power supply voltage and a ground. |
| 申请公布号 |
US2012092939(A1) |
申请公布日期 |
2012.04.19 |
| 申请号 |
US20100917708 |
申请日期 |
2010.11.02 |
| 申请人 |
CHENG HONG-CHEN;CHIU CHIH-CHIEH;LU CHUNG-JI;LEE CHENG HUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG HONG-CHEN;CHIU CHIH-CHIEH;LU CHUNG-JI;LEE CHENG HUNG |
| 分类号 |
G11C7/12;G11C7/06 |
主分类号 |
G11C7/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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