发明名称 |
ADJUSTMENT METHOD OF FREQUENCY CHARACTERISTICS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To control the frequency characteristics of an on-chip antenna, produced on an Si semiconductor substrate having an inevitable parasitic capacitance together with an integrated circuit, freely to a desired value after wafer process manufacturing process. <P>SOLUTION: In the method of adjusting the frequency characteristics of an antenna in a semiconductor device having an integrated circuit and the antenna formed for an Si semiconductor substrate by a first process, a plurality of discontinuous conductive wire patterns are formed between the antenna and the integrated circuit in the first proces, the plurality of conductive wire patterns are selected partially or entirely after finishing the first process, and then a bonding wire is suspended so that the conductive wire patterns thus selected are arranged in series. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012080016(A) |
申请公布日期 |
2012.04.19 |
申请号 |
JP20100226062 |
申请日期 |
2010.10.05 |
申请人 |
TOYOHASHI UNIV OF TECHNOLOGY |
发明人 |
ISHIDA MAKOTO;NGUYEN ANTOINE;HARADA YASOO;YI WANG-HUN |
分类号 |
H01L21/822;H01L27/04;H01P5/02;H01Q23/00;H03H5/02 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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