发明名称 |
METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE |
摘要 |
A 3D IC based system comprising a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper; a second mono-crystallized semiconductor layer comprising second transistors and overlaying the metal layer; wherein the second mono-crystallized semiconductor layer thickness is less than 150 nm, and wherein at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.
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申请公布号 |
US2012091587(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113251269 |
申请日期 |
2011.10.02 |
申请人 |
OR-BACH ZVI;SEKAR DEEPAK C.;CRONQUIST BRIAN |
发明人 |
OR-BACH ZVI;SEKAR DEEPAK C.;CRONQUIST BRIAN |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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