发明名称 |
INTEGRATED PLANAR AND MULTIPLE GATE FETS |
摘要 |
A multiple gate field effect transistor and a planar field effect transistor formed in the same substrate each have a top planar surface underneath each corresponding gate that are co-planar with one another and also co-planar with a top surface of a shallow trench isolation region located therebetween. The relatively older planar FET fabrication technology has added to it the relatively newer MUGFET fabrication technology without disruption to the planar fabrication technology and with relatively little added cost. |
申请公布号 |
US2012094465(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US20100905575 |
申请日期 |
2010.10.15 |
申请人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J. |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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