THREE DIMENSIONAL HORIZONTAL DIODE NON-VOLATILE MEMORY ARRAY AND METHOD OF MAKING THEREOF
摘要
<p>A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion that extends up along at least one side of the trench and a second portion that extends substantially horizontally through the three dimensional stack of the horizontal diodes. Each of the horizontal diodes is a steering element of a respective non-volatile memory cell of the non-volatile memory device, and each of the plurality of storage elements is located adjacent to a respective steering element.</p>
申请公布号
WO2012051159(A1)
申请公布日期
2012.04.19
申请号
WO2011US55721
申请日期
2011.10.11
申请人
SANDISK 3D LLC;NGUYEN, NATALIE;POON, PAUL WAI KIE;RADIGAN, STEVEN J.;KONEVECKI, MICHAEL;MAKALA, RAGHUVEER S.
发明人
NGUYEN, NATALIE;POON, PAUL WAI KIE;RADIGAN, STEVEN J.;KONEVECKI, MICHAEL;MAKALA, RAGHUVEER S.