| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with higher light extraction efficiency, and a manufacturing method therefor. <P>SOLUTION: A semiconductor light-emitting element comprises a semiconductor layer with a first conductivity type, an active layer formed on one surface of the semiconductor layer with the first conductivity type, a semiconductor layer with a second conductivity type formed on the active layer and including a plurality of holes, and a transparent electrode formed on the semiconductor layer with the second conductivity type. A manufacturing method for a semiconductor light-emitting element comprises: a step of forming a semiconductor layer with a second conductivity type, an active layer, and a semiconductor layer with a first conductivity type on a growth substrate; a step of forming a conductive substrate on the semiconductor layer with the first conductivity type; a step of forming a plurality of holes in the semiconductor layer with the second conductivity type by separating the growth substrate from the semiconductor layer with the second conductivity type; and a step of forming a transparent electrode on the semiconductor layer with the second conductivity type. <P>COPYRIGHT: (C)2012,JPO&INPIT |
