| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily reduce dimension difference of a photomask due to development loading accompanied with pattern density difference. <P>SOLUTION: In a reversed pattern of an opening portion pattern 5, a non-opening portion pattern 7 resized in a direction expanding an opening portion is formed. Concerning the opening portion pattern 5, drawing to a resist film 3 is carried out with exposure value sufficient for removing the resist film 3 of an opening portion 4 part. Concerning the non-opening portion pattern 7, drawing to the resist film 3 is carried out with the exposure value of the non-opening portion pattern 7 set on the basis of the drawing area density of a dense portion Pa and a sparse portion Pb so as to make the resist dissolution amount of the dense portion Pa which is a dense pattern area of the opening portion pattern 5 same as the resist dissolution amount of the sparse portion Pb which is a sparse pattern area of the opening portion pattern 5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
