| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a junction field effect transistor (JFET) with a structure capable of further minimizing a contact structure between a buried gate layer and gate wiring. <P>SOLUTION: A p<SP POS="POST">+</SP>-type contact buried layer 14 formed in a trench 13 electrically connects a buried gate layer 10 and gate wiring 12. For this reason, the width of the trench 13 in which only the p<SP POS="POST">+</SP>-type contact buried layer 14 is disposed can be narrow compared to a trench in which, for example, an interlayer insulating film and gate wiring are disposed, like a conventional semiconductor device. Consequently, this can form the semiconductor device having a JFET with a structure capable of further minimizing the contact structure between the buried gate layer 10 and the gate wiring 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
