PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE ENHANCEMENT AGENT, NITRIDE SINGLE CRYSTAL, WAFER AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a practical production process capable of efficiently and easily producing nitride semiconductors with a large-diameter C face and nitride semiconductors having a large thickness in an m-axis direction.

SOLUTION: There is provided a process for producing a nitride semiconductor, comprising a step of regulating temperature and pressure in an autoclave containing a seed having a crystal structure of a hexagonal system, a solvent containing nitrogen element, a starting material comprising a metallic element belonging to group 13 of the periodic table, and a mineralizer so that the solvent is brought to a supercritical state and/or a subcritical state to allow ammonothermal crystal growth of a nitride semiconductor on the surface of the seed, wherein the crystal growth rate in the m-axis direction on the seed is brought to not less than 1.5 times the crystal growth rate in a c-axis direction on the seed.

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