| 摘要 |
This nitride-based semiconductor laser element includes a semiconductor element layer made of a nitride-based semiconductor having an emitting-side cavity facet and a reflecting-side cavity facet, and a facet coating film formed on the emitting-side cavity facet. The facet coating film has a first dielectric film made of aluminum nitride formed in contact with the emitting-side cavity facet, a second dielectric film made of aluminum oxynitride formed on a side of the first dielectric film opposite to the emitting-side cavity facet, a third dielectric film made of aluminum oxide formed on a side of the second dielectric film opposite to the first dielectric film, a fourth dielectric film made of aluminum oxynitride formed on a side of the third dielectric film opposite to the second dielectric film, and a fifth dielectric film made of aluminum oxide formed on a side of the fourth dielectric film opposite to the third dielectric film. |
