发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes: a memory-cell array provided between a first region and a second region, and including a plurality of memory cells; a first row decoder and a second row decoder; a first power line provided in the first region; a second power line provided in the first region; a first power-supply circuit configured to supply the first voltage to the first power line and to the second power line; a first switching circuit; and a second switching circuit. In a write operation, the first switching circuit connects the first power line and the first power-supply circuit to each other whereas the second switching circuit disconnects the second power line and the first power-supply circuit from each other.
申请公布号 US2012092928(A1) 申请公布日期 2012.04.19
申请号 US201113240248 申请日期 2011.09.22
申请人 MAEJIMA HIROSHI;ITO MIKIHIKO;KABUSHIKI KAISHA TOSHIBA 发明人 MAEJIMA HIROSHI;ITO MIKIHIKO
分类号 G11C16/10;G11C16/04 主分类号 G11C16/10
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