发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes: a memory-cell array provided between a first region and a second region, and including a plurality of memory cells; a first row decoder and a second row decoder; a first power line provided in the first region; a second power line provided in the first region; a first power-supply circuit configured to supply the first voltage to the first power line and to the second power line; a first switching circuit; and a second switching circuit. In a write operation, the first switching circuit connects the first power line and the first power-supply circuit to each other whereas the second switching circuit disconnects the second power line and the first power-supply circuit from each other. |
申请公布号 |
US2012092928(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113240248 |
申请日期 |
2011.09.22 |
申请人 |
MAEJIMA HIROSHI;ITO MIKIHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEJIMA HIROSHI;ITO MIKIHIKO |
分类号 |
G11C16/10;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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