发明名称 |
PROTECTION STRUCTURE FOR METAL-OXIDE-METAL CAPACITOR |
摘要 |
A capacitor structure includes first and second sets of electrodes and a plurality of line plugs. The first set of electrodes has a first electrode and a second electrode formed in a first metallization layer among a plurality of metallization layers, wherein the first electrode and the second electrode are separated by an insulation material. The second set of electrodes has a third electrode and a fourth electrode formed in a second metallization layer among the plurality of metallization layers, wherein the third electrode and the fourth electrode are separated by the insulation material. The line plugs connect the second set of electrodes to the first set of electrodes. |
申请公布号 |
US2012092806(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US20110984731 |
申请日期 |
2011.01.05 |
申请人 |
HUA WEI-CHUN;CHANG CHUNG-LONG;CHEN CHUN-HUNG;CHAO CHIH-PING;CHENG JYE-YEN;TSENG HUA-CHOU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUA WEI-CHUN;CHANG CHUNG-LONG;CHEN CHUN-HUNG;CHAO CHIH-PING;CHENG JYE-YEN;TSENG HUA-CHOU |
分类号 |
H01G4/005;H01G7/00 |
主分类号 |
H01G4/005 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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